Room Temperature NDR Performance of GaInAs based SE - RTBT
نویسنده
چکیده
106204-9494 IJECS-IJENS © August 2010 IJENS I J E N S Abstract— Superlattice emitter resonant tunneling bipolar transistor (SE-RTBT) is facing problem due to thermal transfer of electrons over barrier which causes diminishing negative differential resistance (NDR) effect. Therefore resonant tunneling diode (RTD) with higher quasibound state energy causes transfer of electrons by RT effect instead of thermal process. The RT effect can be enhanced by controlling the barrier and well widths of RTD. It has been found that InP/GaInAs SE-RTBT shows better NDR characteristic at room temperature.
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